Semiconductor-homojunction induction in single-crystal GaN nanostructures under a transverse electric field: Ab initio calculations

Author(s): Hulusi Yilmaz, Brad R. Weiner, and Gerardo Morell<br/>Ab initio calculations show that a transverse electric field induces a homojunction across the diameter of initially semiconducting GaN single-crystal nanotubes (SCNTs) and nanowires (NWs). The homojunction arises due to the decreased energy of the electronic states in the higher potential region wi...<br/><img src="" width="30" height="30" alt="Free to Read"/><br/><img src="" width="30" height="30" alt="Rapid Communication"/><br/>[Phys. Rev. B 81, 041312] Published Fri Jan 29, 2010

Alloy Catalyst in a Reactive Environment: The Example of Ag-Cu Particles for Ethylene Epoxidation

Author(s): Simone Piccinin, Spiros Zafeiratos, Catherine Stampfl, Thomas W. Hansen, Michael Hävecker, Detre Teschner, Valerii I. Bukhtiyarov, Frank Girgsdies, Axel Knop-Gericke, Robert Schlögl, and Matthias Scheffler<br/>Combining first-principles calculations and in situ photoelectron spectroscopy, we show how the composition and structure of the surface of an alloy catalyst is affected by the temperature and pressure of the reagents. The Ag-Cu alloy, recently proposed as an improved catalyst for ethylene epoxidat...<br/><img src="" width="30" height="30" alt="Free to Read"/><br/>[Phys. Rev. Lett. 104, 035503] Published Fri Jan 22, 2010

Threshold for Thermal Ionization of an Aluminum Surface by Pulsed Megagauss Magnetic Field

Author(s): T. J. Awe, B. S. Bauer, S. Fuelling, and R. E. Siemon<br/>The first measurement of the threshold for thermal ionization of the surface of thick metal by pulsed magnetic field (B) is reported. Thick aluminum—with depth greater than the magnetic skin layer—was pulsed with ∂B/∂t from 30–80  MG/μs. Novel loads avoided nonthermal plasma (from ele...<br/><img src="" width="30" height="30" alt="Free to Read"/><br/>[Phys. Rev. Lett. 104, 035001] Published Wed Jan 20, 2010